vishay siliconix SIS444DN new product document number: 63276 s11-1379-rev. a, 11-jul-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 30 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? motor control ? industrial ? load switch ? oring notes: a. surface mounted on 1" x 1" fr4 board. b. t = 10 s. c. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak 1212-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manu facturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. d. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. e. maximum under steady state conditions is 81 c/w. f. based on t c = 25 c. g. package limited. product summary v ds (v) r ds(on) ( ? ) max. i d (a) f q g (typ.) 30 0.0033 at v gs = 10 v 35 g 33.5 nc 0.0043 at v gs = 4.5 v 35 g orderin g information: sis444d n -t1-ge3 (lead (p b )-free and halogen-free) 1 2 3 4 5 6 7 8 s s s g d d d d 3.30 mm 3.30 mm powerpak ? 1212-8 bottom v ie w n -channel mosfet g d s absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 35 g a t c = 70 c 35 g t a = 25 c 24.9 a, b t a = 70 c 20 a, b pulsed drain current (t = 300 s) i dm 70 continuous source-drain diode current t c = 25 c i s 35 g t a = 25 c 3.3 a, b single pulse avalanche current l = 0.1 mh i as 20 single pulse avalanche energy e as 20 mj maximum power dissipation t c = 25 c p d 52 w t c = 70 c 43 t a = 25 c 3.7 a, b t a = 70 c 3.1 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) c, d 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, e t ? 10 s r thja 24 33 c/w maximum junction-to-case (drain) steady state r thjc 1.9 2.4 free datasheet http:///
www.vishay.com 2 document number: 63276 s11-1379-rev. a, 11-jul-11 vishay siliconix SIS444DN new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v v ds temperature coefficient ? v ds /t j i d = 250 a 30 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 5.6 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.2 2.3 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds ?? 5 v, v gs = 10 v 30 a drain-source on-state resistance a r ds(on) v gs ?? 10 v, i d = 10 a 0.0026 0.0033 ? v gs ?? 4.5 v, i d = 7 a 0.0034 0.0043 forward transconductance a g fs v ds = 15 v, i d = 10 a 65 s dynamic b input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 3065 pf output capacitance c oss 406 reverse transfer capacitance c rss 360 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 10 a 68 102 nc v ds = 15 v, v gs = 4.5 v, i d = 10 a 33.5 51 gate-source charge q gs 7.7 gate-drain charge q gd 13.8 gate resistance r g f = 1 mhz 0.3 0.7 1.4 ? tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? 24 45 ns rise time t r 24 45 turn-off delay time t d(off) 32 60 fall time t f 12 24 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 10 v, r g = 1 ? 14 28 rise time t r 13 26 turn-off delay time t d(off) 33 60 fall time t f 816 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 35 a pulse diode forward current i sm 70 body diode voltage v sd i s = 3 a, v gs ?? 0 v 0.7 1.1 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 21 40 ns body diode reverse recovery charge q rr 10 20 nc reverse recovery fall time t a 9 ns reverse recovery rise time t b 12
document number: 63276 s11-1379-rev. a, 11-jul-11 www.vishay.com 3 vishay siliconix SIS444DN new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge 0 14 28 42 56 70 0 0.5 1 1.5 2 2.5 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 3 v v gs = 10 v thru 4 v v gs = 2 v 0.0020 0.0024 0.0028 0.0032 0.0036 0.0040 0 12 24 36 48 60 r ds(on) - on-resistance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 14 28 42 56 70 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 15 v v ds = 20 v v ds = 10 v i d = 10 a transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0 12345 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 900 1800 2700 3600 4500 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50-250 255075100125150 r ds(on) - on-resistance (normalized) t j - junction temperature ( c) i d = 10 a v gs = 10 v v gs = 4.5 v
www.vishay.com 4 document number: 63276 s11-1379-rev. a, 11-jul-11 vishay siliconix SIS444DN new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c -0.8 -0.6 -0.4 -0.2 0.2 0 0.4 -50-250 255075100125150 v gs(th) - variance (v) t j -temperature ( c) i d = 250 a i d = 5 ma on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.000 0.003 0.006 0.009 0.012 0.015 0246810 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 10 a 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 power (w) time (s) safe operating area, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 100 s 100 ms limited by r ds(on) * 1 ms i dm limited t c = 25 c single pulse bvdss limited 10 ms 10 s 1 s dc i d limited
document number: 63276 s11-1379-rev. a, 11-jul-11 www.vishay.com 5 vishay siliconix SIS444DN new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 20 40 60 80 100 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) limited by package power, junction-to-case 0 13 26 39 52 65 0 25 50 75 100 125 150 t c - case temperature (c) power (w) power, junction-to-ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 t a - ambient temperature (c) power (w)
www.vishay.com 6 document number: 63276 s11-1379-rev. a, 11-jul-11 vishay siliconix SIS444DN new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63276 . normalized thermal transient im pedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 81 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted normalized thermal transient impedance, junction-to-case 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse
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